Widefield subsurface microscopy of integrated circuits
نویسندگان
چکیده
منابع مشابه
Widefield subsurface microscopy of integrated circuits.
We apply the numerical aperture increasing lens technique to widefield subsurface imaging of silicon integrated circuits. We demonstrate lateral and longitudinal resolutions well beyond the limits of conventional backside imaging. With a simple infrared widefield microscope (lambda(0) = 1.2 microm), we demonstrate a lateral spatial resolution of 0.26 microm (0.22 lambda(0)) and a longitudinal r...
متن کاملDielectric interface effects in subsurface microscopy of integrated circuits
Article history: Received 29 September 2011 Received in revised form 6 December 2011 Accepted 9 December 2011 Available online 22 December 2011
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We investigate the effect of an annular pupil-plane aperture in confocal imaging while using an NA increasing lens. We show that focal spot shape is highly sensitive to both polarization and angular spectrum of the incoming light. We demonstrate a lateral spatial resolution of 145 nm (lambda(0)/9) in the direction perpendicular to the polarization direction.
متن کاملSubsurface microscopy of interconnect layers of an integrated circuit.
We apply the NA-increasing lens technique to confocal and wide-field backside microscopy of integrated circuits. We demonstrate 325 nm (lambda(0)/4) lateral spatial resolution while imaging metal structures located inside the interconnect layer of an integrated circuit. Vectorial field calculations are presented justifying our findings.
متن کاملHigh spatial resolution subsurface microscopy
We present a high-spatial-resolution subsurface microscopy technique that significantly increases the numerical aperture of a microscope without introducing an additional spherical aberration. Consequently, the diffraction-limited spatial resolution is improved beyond the limit of standard subsurface microscopy. By realizing a numerical aperture of 3.4, we experimentally demonstrate a lateral s...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2008
ISSN: 1094-4087
DOI: 10.1364/oe.16.009501